Job TitlePower Amplifier Designer
DivisionQualcomm Technologies, Inc.
Job AreaEngineering - Hardware
LocationMassachusetts - Boxborough
Job OverviewQualcomm is looking for a Power Amplifier Designer with thorough knowledge of IC design to join our Qualcomm Front-end Team (QFE) to participate in the development for emerging mobile wireless applications. Join this growing team to develop a highly integrated and innovative multi-mode/multi-band power amplifier in emerging worldwide wireless standards such as LTE, UMTS, WiMAX and WLAN. Work in a team environment developing highly integrated RF power amplifier modules for high volume production.
Responsibilities include integrated circuit design, substrate design, RF test and verification, defining requirements and interfacing with BAW/SAW filter foundries, analog/digital designers. The position will interface with core teams to improve yield and reliability during product launch. Simulation tools such as Agilent ADS, Cadence, HFSS will be used for design. Will also act as liaison between design engineering and foundries for process improvements. Provide mentoring to other designers in the art of power amplifier design for high yield. Responsible for all aspects of circuit design and product development, feedback on specification and customer interaction.
Minimum QualificationsRequired: 5+ years of professional experience in the following:
- Handset Power Amplifier IC and laminate designs;
- RF measurement experience such as spectrum and/or network analyzers
Preferred QualificationsDesired: 5+ years of experience in the following:
- ADS and HFSS EM simulation experience
- HBT experience
Education RequirementsRequired: Bachelor's, Electrical Engineering
Preferred: Master's, Electrical Engineering
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